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Where (E_m) is the maximum lateral field near drain, (\Phi_b) is the barrier height for impact ionization, and λ is the mean free path. High (E_m) (short channel, high V_dd) exponentially increases hot carrier generation.
: Detailed analysis of the silica and silica-silicon interface.
: Providing a critical assessment of existing literature and correcting previous theoretical formulations. Key Technical Concepts